Bower's invention, one of 24 he has patented, is officially called the
"Field-Effect Device with Insulated Gate," known as the "Self-Aligned Gate
MOSFET." Patented in 1969, the device provided semiconductors with the
speed they needed to serve in modern microelectronic applications. Bower
developed it while working at the Hughes Research Laboratories in Malibu,
Robert Bower invented a device that
provided semiconductors with more speed - National Inventors Hall of Fame.
Robert Bower, UC Davis
Robert Bower was elected in 1997
as a member of the National Inventors Hall of Fame for the invention of
the self aligned-gate MOSFET.
Press Release: Leo Esaki was awarded the Nobel Prize in Physics
in 1973 for his discovery of tunneling in semiconductors. Tunneling is
a quantum mechanical effect in which an electron passes through a potential
barrier even though classical theory predicted that it could not. Dr. Esaki's
discovery led to the creation of the Esaki diode, an important component
of solid state physics with practical applications in high-speed circuits
found in computers and communications networks. Dr. Esaki shared the 1973
Nobel Prize with physicists Ivar Giaever of Norway and Brian D. Josephson
of Great Britain.
The Nobel Prize recognized achievements
by Dr. Esaki while working as a researcher at Sony Corp. from 1956 to 1960.
He joined IBM in 1960 as a researcher at the Thomas J. Watson Research
Center in Yorktown Heights, N.Y., and was named an IBM Fellow in 1965.
Born on March 12, 1925 in Osaka,
Japan, Leo Esaki was educated at the University of Tokyo, where he received
his bachelor's degree in 1947 and his doctorate degree in 1959. Before
joining Sony, he spent nine years as a researcher at Kobe Kogyo Corp. in
Japan. In 1993, Dr. Esaki retired from IBM and accepted an appointment
as president of the University of Tsukuba, considered Japan's most technologically
of International Business Machines Corporation. Unauthorized use not permitted.
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